Crystal Structure and Ferroelectric Properties of ε-Ga2O3 Films Grown on (0001)-Sapphire-Reference-Cited by-同舟云学术

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Crystal Structure and Ferroelectric Properties of ε-Ga2O3 Films Grown on (0001)-Sapphire

Published:2016-11-08 Issue:22 Volume:55 Page:12079-12084
ISSN:0020-1669
Container-title:Inorganic Chemistry
language:en
Short-container-title:Inorg. Chem.

Author:

Mezzadri Francesco¹²,Calestani Gianluca¹,Boschi Francesco²³,Delmonte Davide²,Bosi Matteo²,Fornari Roberto²³

Affiliation:

1. Department of Chemistry, University of Parma, Parco Area delle Scienze 17/A 43124 Parma, Italy

2. IMEM-CNR, Parco Area delle Scienze 37/A, 43124 Parma, Italy

3. Department of Physics and Earth Sciences, University of Parma, Parco Area delle Scienze 7/A, 43124 Parma, Italy

Funder

Fondazione Cariparma

Publisher

American Chemical Society (ACS)

Subject

Inorganic Chemistry,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.inorgchem.6b02244

Reference22 articles.

1. Large-size β-Ga2O3 single crystals and wafers

2. Growth of β-Ga2O3Single Crystals by the Edge-Defined, Film Fed Growth Method

3. Czochralski growth and characterization of β-Ga2O3 single crystals

4. Surface morphology of homoepitaxial β-Ga2O3 thin films grown by molecular beam epitaxy

5. MBE grown Ga2O3 and its power device applications

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