Surface two-dimensional hole gas in Si doped β-Ga2O3 thin film-Reference-Cited by-同舟云学术

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Surface two-dimensional hole gas in Si doped β-Ga2O3 thin film

Published:2024-01 Issue: Volume:971 Page:172713
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Chikoidze Ekaterine,Leach Jacob,Chi Zeyu^ORCID,von Bardeleben Jurgen,Ballesteros Belén,Gonçalves Anne-Marie,Tchelidze Tamar,Dumont Yves,Pérez-Tomás Amador

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference50 articles.

1. Halide vapor phase epitaxial growth of - Ga2O3 and -Ga2O3 films,J.H.Leach,APL Mater. 7, 022504 (2019); 〈https://doi.org/10.1063/1.5055680〉.

2. Direct evidence of metallicity at ZnO ( 000 1 ¯) − ( 1 × 1) surfaces from angle-resolved photoemission spectroscopy;Piper;Phys. Rev. B.,2010

3. The Itinerant 2D Electron Gas of the Indium Oxide (111) Surface: Implications for Carbon‐ and Energy‐Conversion Applications;Jovic;Small,2020

4. Direct observation of a two-dimensional hole gas at oxide interfaces;Lee;Nat. Mater.,2018

5. A solution for two-dimensional hole gases;Caironi;Nat. Mater.,2021

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