Analysis of mobility-limiting mechanisms of the two-dimensional hole gas on hydrogen-terminated diamond
Author:
Funder
National Science Foundation
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.102.075303/fulltext
Reference40 articles.
1. Progress Toward Diamond Power Field-Effect Transistors
2. The nature of the acceptor centre in semiconducting diamond
3. High-Performance P-Channel Diamond Metal–Oxide–Semiconductor Field-Effect Transistors on H-Terminated (111) Surface
4. Comparative investigation of surface transfer doping of hydrogen terminated diamond by high electron affinity insulators
5. Origin of Surface Conductivity in Diamond
Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ultrahigh On/Off Ratio (110) Diamond Transistors with Exceptional Reproducibility of Normally Off Characteristics;The Journal of Physical Chemistry Letters;2024-09-05
2. Achieving ultrahigh hole mobility in hydrogen-terminated diamond via boron nitride modifications;Diamond and Related Materials;2024-04
3. From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices;Journal of Physics: Materials;2024-03-08
4. Hydrogen-Terminated Diamond Field-Effect Transistors With 1011 ON/ OFF Ratio Using an Al2O3/HfO2 Stacked Passivation Layer;IEEE Transactions on Electron Devices;2024-01
5. Precision sub-monolayer manipulation of diamond surface chemistry using laser direct write oxidation in air;Applied Physics Letters;2023-12-25
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3