Hydrogen-Terminated Diamond Field-Effect Transistors With 1011 ON/ OFF Ratio Using an Al2O3/HfO2 Stacked Passivation Layer-Reference-Cited by-同舟云学术

Hydrogen-Terminated Diamond Field-Effect Transistors With 10¹¹ ON/ OFF Ratio Using an Al₂O₃/HfO₂ Stacked Passivation Layer

Published:2024-01 Issue:1 Volume:71 Page:940-943
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chen Zhihao¹,Yu Xinxin²^ORCID,Mao Shuman¹^ORCID,Zhou Jianjun²,Kong Yuechan²^ORCID,Chen Tangsheng²,Xu Ruimin³,Yan Bo³,Xu Yuehang¹^ORCID

Affiliation:

1. Research Center of Integrated Circuits and Systems, Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou, China

2. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing, China

3. School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China

Funder

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10382412/10354016.pdf?arnumber=10354016

Reference38 articles.

1. Progress Toward Diamond Power Field-Effect Transistors

2. Microwave diamond devices technology: Field‐effect transistors and modeling

3. Refractory two-dimensional hole gas on hydrogenated diamond surface

4. MOSFETs on (110) C–H Diamond: ALD Al₂O₃/Diamond Interface Analysis and High Performance Normally-OFF Operation Realization

5. Performance of H-diamond MOSFETs with high temperature ALD grown HfO2 dielectric

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