Progress Toward Diamond Power Field-Effect Transistors-Reference-Cited by-同舟云学术

Progress Toward Diamond Power Field-Effect Transistors

Published:2018-11 Issue:22 Volume:215 Page:1800681
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Geis Michael W.¹²^ORCID,Wade Travis C.²,Wuorio Charles H.¹,Fedynyshyn Theodore H.¹,Duncan Bradley¹,Plaut Maxwell E.¹,Varghese Joseph O.¹,Warnock Shireen M.¹,Vitale Steven A.¹,Hollis Mark A.¹

Affiliation:

1. Massachusetts Institute of Technology; Lincoln Laboratory; Advanced Technology Division; 244 Wood St. Lexington 02421-6426 MA USA

2. Plasmability LLC; 4715 Steiner Ranch Blvd 78732-2317 Austin TX USA

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201800681/fullpdf

Reference76 articles.

1. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

2. New Unipolar Switching Power Device Figures of Merit

3. Power semiconductor device figure of merit for high-frequency applications

4. http://www.ioffe.ru/SVA/NSM/Semicond/Diamond/bandstr.html#Donors

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