High-Performance P-Channel Diamond Metal–Oxide–Semiconductor Field-Effect Transistors on H-Terminated (111) Surface-Reference-Cited by-同舟云学术

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High-Performance P-Channel Diamond Metal–Oxide–Semiconductor Field-Effect Transistors on H-Terminated (111) Surface

Published:2010-03-19 Issue:4 Volume:3 Page:044001
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Hirama Kazuyuki,Tsuge Kyosuke,Sato Syunsuke,Tsuno Tetsuya,Jingu Yoshikatsu,Yamauchi Shintaro,Kawarada Hiroshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/3/i=4/a=044001/pdf

Reference14 articles.

1. Enhancement mode metal‐semiconductor field effect transistors using homoepitaxial diamonds

2. High-frequency performance of diamond field-effect transistor

3. Diamond field effect transistors—concepts and challenges

4. Influence of epitaxy on the surface conduction of diamond film

5. Over 20-GHz Cutoff Frequency Submicrometer-Gate Diamond MISFETs

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3. Fabrication of self-standing large (111) single crystal diamond using bulk growth of (100) CVD diamond and lift-off process;Diamond and Related Materials;2024-02

4. 2.1 W/mm Output Power Density at 10 GHz for H-Terminated Diamond MOSFETs With (111)-Oriented Surface;IEEE Journal of the Electron Devices Society;2024

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