Enhancement mode metal‐semiconductor field effect transistors using homoepitaxial diamonds
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112915
Reference12 articles.
1. High-temperature point-contact transistors and Schottky diodes formed on synthetic boron-doped diamond
2. Electrical characteristics of Schottky diodes fabricated using plasma assisted chemical vapor deposited diamond films
3. Field-Effect Transistors using Boron-Doped Diamond Epitaxial Films
4. The electrical properties and device applications of homoepitaxial and polycrystalline diamond films
5. An ion-implanted diamond metal-insulator-semiconductor field-effect transistor
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