2.1 W/mm Output Power Density at 10 GHz for H-Terminated Diamond MOSFETs With (111)-Oriented Surface
Author:
Affiliation:
1. Nanjing Electronic Devices Institute, Nanjing, China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology
Link
http://xplorestaging.ieee.org/ielx7/6245494/10416702/10373932.pdf?arnumber=10373932
Reference26 articles.
1. Diamond as an electronic material
2. Diamond power devices: state of the art, modelling, figures of merit and future perspective
3. High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond
4. Effect of n- and p-type doping concentrations and compensation on the electrical properties of semiconducting diamond
5. Boron-Doped Diamond MOSFETs With High Output Current and Extrinsic Transconductance
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