Achieving ultrahigh hole mobility in hydrogen-terminated diamond via boron nitride modifications-Reference-Cited by-同舟云学术

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Achieving ultrahigh hole mobility in hydrogen-terminated diamond via boron nitride modifications

Published:2024-04 Issue: Volume:144 Page:111007
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Yang Mingyang,Hu Youwang,Cui Junfeng,Yang Yingying,Qiu Mengting,Lu Yunxiang,Shen Yi,Jia Zhenglin,Nishimura Kazuhito,Tang Chun,Jiang Nan,Yuan Qilong

Funder

Ningbo Institute of Materials Technology and Engineering CAS

Publisher

Elsevier BV

Reference53 articles.

1. Wide-bandgap semiconductor materials: for their full bloom;Fujita;Jpn. J. Appl. Phys.,2015

2. Reliability of GaN high-Electron-mobility transistors: state of the art and perspectives;Meneghesso;IEEE Trans. Device Mater. Reliab.,2008

3. M. Willander, M. Friesel, Q.-u. Wahab, B. Straumal, Silicon carbide and diamond for high temperature device applications, J. Mater. Sci. Mater. Electron. 17 (2006) 1–25.

4. Enhancement of carrier mobility in semiconductor nanostructures by dielectric engineering;Jena;Phys. Rev. Lett.,2007

5. Recent advances in the carrier mobility of two-dimensional materials: a theoretical perspective;Mir;ACS Omega,2020

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