Atomic scale model interfaces between high-khafnium silicates and silicon
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.75.245304/fulltext
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1. High-k gate stacks for planar, scaled CMOS integrated circuits
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5. Materials characterization of ZrO2–SiO2 and HfO2–SiO2 binary oxides deposited by chemical solution deposition
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