Geometric structure and electronic properties of wurtzite GaN/HfO2 interface: A first-principles study-Reference-Cited by-同舟云学术

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Geometric structure and electronic properties of wurtzite GaN/HfO2 interface: A first-principles study

Published:2018-12-28 Issue:24 Volume:124 Page:245703
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Zou Bo¹,Wang Linxia¹,Chen Yunzhu¹^ORCID,Wang Ying¹,Su Guofang¹^ORCID,Zheng Dan²,Cai Genwang³,Wang Weichao¹^ORCID

Affiliation:

1. Department of Electronics and Tianjin Key Laboratory of Photo-Electronic Thin Film Device and Technology, Nankai University, Tianjin 300071, China

2. College of Science, Henan Agriculture University, Zhengzhou, Henan 450002, China

3. College of Science, Henan University of Technology, Zhengzhou 450001, China

Funder

the national key research and development program of china

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5048946

Reference28 articles.

1. Band offsets of high K gate oxides on III-V semiconductors

2. Flatband voltage instability characteristics of HfO2-based GaAs metal-oxide-semiconductor capacitors with a thin Ge layer

3. Al₂O₃/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer

4. AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor

5. HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hybrid density functional theory study on zinc blende GaN and diamond surfaces and interfaces: Effects of size, hydrogen passivation, and dipole corrections;Computational Condensed Matter;2022-03

2. Low trap density of oxygen-rich HfO₂/GaN interface for GaN MIS-HEMT applications;Journal of Vacuum Science & Technology B;2022-03

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