Direct evidence of Be as an amphoteric dopant in GaN
Author:
Funder
Fundação para a Ciência e a Tecnologia
Fonds Wetenschappelijk Onderzoek
KU Leuven
Horizon 2020
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.105.184112/fulltext
Reference49 articles.
1. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
2. Nobel Lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p -type GaN by Mg doping followed by low-energy electron beam irradiation
3. Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy
4. First-principles calculations for defects and impurities: Applications to III-nitrides
5. Self-compensation due to point defects in Mg-doped GaN
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Overcoming the compensation of acceptors in GaN:Mg by defect complex formation;APL Materials;2023-08-01
2. Photoluminescence from GaN Implanted with Be and F;physica status solidi (b);2023-05-25
3. Direct evidence of Be as an amphoteric dopant in GaN;Physical Review B;2022-05-27
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