Affiliation:
1. Department of Physics Virginia Commonwealth University Richmond VA 23220 USA
2. College of Nanoscale Science and Engineering SUNY Polytechnic Institute Albany NY 12203 USA
Abstract
GaN samples are implanted with Be and F and annealed in different conditions to activate the BeGa acceptors. Photoluminescence spectra are studied to recognize the defects. The UVLBe band with a maximum at 3.38 eV and the YLBe band with a maximum at 2.15 eV are observed and associated with Be. The sequential implantation of Be and F ions into GaN at 600 °C reduces the concentration of nitrogen vacancies (VN), as evidenced by the lack of the green luminescence band associated with the isolated nitrogen vacancy. First‐principles calculations are employed to find parameters of defects that can form after implantation.
Funder
Directorate for Mathematical and Physical Sciences
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
2 articles.
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