Shallow and Deep States of Beryllium Acceptor in GaN: Why Photoluminescence Experiments Do Not Reveal Small Polarons for Defects in Semiconductors
Author:
Funder
National Science Foundation
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.126.027401/fulltext
Reference36 articles.
1. Luminescence properties of defects in GaN
2. Impact of Group-II Acceptors on the Electrical and Optical Properties of GaN
3. Origin of Deep Be Acceptor Levels in Nitride Semiconductors: The Roles of Chemical and Strain Effects
4. Dual nature of acceptors in GaN and ZnO: The curious case of the shallow MgGa deep state
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