Gate bias polarity dependent H migration and O vacancy generation through Si=O–H complex formation in SiO2/Si(100)
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.85.085307/fulltext
Reference27 articles.
1. Trap creation in silicon dioxide produced by hot electrons
2. Hole traps and trivalent silicon centers in metal/oxide/silicon devices
3. Origin ofPb1center atSiO2∕Si(100)interface: First-principles calculations
4. Dangling Bond Defects atSi−SiO2Interfaces: Atomic Structure of thePb1Center
5. Electron spin resonance features of interface defects in thermal (100)Si/SiO2
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3. Mechanism of gate dielectric degradation by hydrogen migration from the cathode interface;Microelectronics Reliability;2017-03
4. Origin of the unidentified positive mobile ions causing the bias temperature instability in SiC MOSFETs and their diffusion process;Applied Physics Express;2016-05-16
5. H-H interactions from SiO2 to SiO2/Si(100) interfaces and H-induced O vacancy generation via 3-fold coordinated O in SiO2;Journal of Applied Physics;2013-04-07
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