H-H interactions from SiO2 to SiO2/Si(100) interfaces and H-induced O vacancy generation via 3-fold coordinated O in SiO2
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4796146
Reference29 articles.
1. Trap creation in silicon dioxide produced by hot electrons
2. Hole traps and trivalent silicon centers in metal/oxide/silicon devices
3. Origin ofPb1center atSiO2∕Si(100)interface: First-principles calculations
4. Dangling Bond Defects atSi−SiO2Interfaces: Atomic Structure of thePb1Center
5. Electron spin resonance features of interface defects in thermal (100)Si/SiO2
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