Effects of terminated atoms, porosity and drilling orientations on the band structure of porous silicon-Reference-Cited by-同舟云学术

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Effects of terminated atoms, porosity and drilling orientations on the band structure of porous silicon

Published:2017-08 Issue: Volume:136 Page:126-132
ISSN:0927-0256
Container-title:Computational Materials Science
language:en
Short-container-title:Computational Materials Science

Author:

Zhang Kaiqi,Xu Ruiping,Zhen Congmian,Wu Ying,Li Guoke,Ma Li,Hou Denglu

Funder

National Natural Science Foundation of China

Key Project of Natural Science of Hebei Higher Education

Hebei Talent Cultivation Foundation

Publisher

Elsevier BV

Subject

Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science

Reference24 articles.

1. E. Secret, C. Leonard, S. J. Kelly, A. Uhl, C. Cozzan, J.S. Andrew, 32 (2016) 1166–1170.

2. Depth detection and fabrication of porous silicon without the stress

3. Electrolytic Shaping of Germanium and Silicon

4. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

5. Black silicon: fabrication methods, properties and solar energy applications

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