Origin of the unidentified positive mobile ions causing the bias temperature instability in SiC MOSFETs and their diffusion process
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/9/i=6/a=064301/pdf
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1. Ozone oxidation of 4H-SiC and flat-band voltage stability of SiC MOS capacitors;Chinese Physics B;2022-11-01
2. Bias temperature instability in SiC metal oxide semiconductor devices;Journal of Physics D: Applied Physics;2021-01-19
3. Defect engineering in SiC technology for high-voltage power devices;Applied Physics Express;2020-11-26
4. Low-temperature re-oxidation of near-interface defects and voltage stability in SiC MOS capacitors;Applied Surface Science;2020-11
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