Si epitaxial growth on Br-Si(100): How steric repulsive interactions influence overlayer development
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.70.165321/fulltext
Reference24 articles.
1. Halogen etching of Si via atomic-scale processes
2. Surface Modification without Desorption: Recycling of Cl onSi(100)−(2×1)
3. Spontaneous Roughening: Fundamental Limits in Si(100) Halogen Etch Processing
4. Dynamics of surface roughening of Cl-terminated Si(100)-(2×1) at 700 K
5. Equilibrium morphologies for Cl-roughened Si(100) at 700–750 K: Dependence on Cl concentration
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1. Si epitaxy on Cl-Si(100);Applied Surface Science;2022-07
2. Ab Initio Study of the Early Stage of Si Epitaxy on the Chlorinated Si(100) Surface;The Journal of Physical Chemistry C;2019-07-18
3. Nanometer-Scale Structure Formation on Solid Surfaces;Nano- and Micromaterials;2008
4. Germanium growth on Br-terminated Si(100);Surface Science;2006-07
5. Adsorption site preference of Br onSi(111)−7×7;Physical Review B;2006-03-20
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