Ab Initio Study of the Early Stage of Si Epitaxy on the Chlorinated Si(100) Surface-Reference-Cited by-同舟云学术

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Ab Initio Study of the Early Stage of Si Epitaxy on the Chlorinated Si(100) Surface

Published:2019-07-18 Issue:32 Volume:123 Page:19806-19811
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Pavlova Tatiana V.¹²^ORCID,Skorokhodov Egor S.¹³,Zhidomirov Georgy M.¹²,Eltsov Konstantin N.¹²

Affiliation:

1. Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow 119991, Russia

2. National Research University Higher School of Economics, Moscow 101000, Russia

3. Moscow Institute of Physics and Technology, Dolgoprudny 141701, Russia

Funder

Russian Science Foundation

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.9b06128

Reference32 articles.

1. Ultradense phosphorous delta layers grown into silicon from PH3 molecular precursors

2. Suppressing Segregation in Highly Phosphorus Doped Silicon Monolayers

3. Ohm’s Law Survives to the Atomic Scale

4. Limits to Metallic Conduction in Atomic-Scale Quasi-One-Dimensional Silicon Wires

5. A single-atom transistor

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomistic description of Si etching with HCl;Applied Surface Science;2024-06

2. PBr3 adsorption on a chlorinated Si(100) surface with mono- and bivacancies;The Journal of Chemical Physics;2024-02-01

3. Bismuth trichloride as a molecular precursor for silicon doping;Applied Physics Letters;2023-04-10

4. Adsorption Behaviors of Chlorosilanes, HCl, and H₂ on the Si(100) Surface: A First-Principles Study;ACS Omega;2022-11-10

5. Si epitaxy on Cl-Si(100);Applied Surface Science;2022-07

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