Suppressing Segregation in Highly Phosphorus Doped Silicon Monolayers-Reference-Cited by-同舟云学术

Suppressing Segregation in Highly Phosphorus Doped Silicon Monolayers

Published:2015-11-20 Issue:12 Volume:9 Page:12537-12541
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Keizer Joris G.¹,Koelling Sebastian²,Koenraad Paul M.²,Simmons Michelle Y.¹

Affiliation:

1. Centre for Quantum Computation and Communication Technology, Australian Reseach Council Centre of Excellence, School of Physics, University of New South Wales, Sydney, New South Wales 2052, Australia

2. Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, NL-5600 MB Eindhoven, The Netherlands

Funder

Nederlandse Organisatie voor Wetenschappelijk Onderzoek

Centre for Quantum Computation and Communication Technology, Australian Research Council

Army Research Office

National Security Agency

Australian Research Council

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.5b06299

Reference28 articles.

1. Silicon spintronics

2. Towards the atomic-scale fabrication of a silicon-based solid state quantum computer

3. Realization of Atomically Controlled Dopant Devices in Silicon

4. Electronic properties of atomically abrupt tunnel junctions in silicon

5. Single-charge detection by an atomic precision tunnel junction

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