Realization of Atomically Controlled Dopant Devices in Silicon-Reference-Cited by-同舟云学术

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Realization of Atomically Controlled Dopant Devices in Silicon

Published:2007-04-02 Issue:4 Volume:3 Page:563-567
ISSN:1613-6810
Container-title:Small
language:en
Short-container-title:Small

Author:

Rueß Frank J.,Pok Wilson,Reusch Thilo C. G.,Butcher Matthew J.,Goh Kuan Eng J.,Oberbeck Lars,Scappucci Giordano,Hamilton Alex R.,Simmons Michelle Y.

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Reference43 articles.

1. Positioning single atoms with a scanning tunnelling microscope

2. Fabrication of Atomic-Scale Structures on Si(001) Surfaces

3. Nanoscale patterning and oxidation of H‐passivated Si(100)‐2×1 surfaces with an ultrahigh vacuum scanning tunneling microscope

4. Al Nucleation on Monohydride and Bare Si(001) Surfaces: Atomic Scale Patterning

5. Nanoscale growth of silver on prepatterned hydrogen-terminated Si(001) surfaces

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1. Single‐Atom Control of Arsenic Incorporation in Silicon for High‐Yield Artificial Lattice Fabrication;Advanced Materials;2024-03-22

2. Atomically Precise Manufacturing of Silicon Electronics;ACS Nano;2024-02-20

3. EUV-induced hydrogen desorption as a step towards large-scale silicon quantum device patterning;Nature Communications;2024-01-24

4. Superexchange coupling of donor qubits in silicon;Physical Review Applied;2024-01-22

5. Single-Ion Counting with an Ultra-Thin-Membrane Silicon Carbide Sensor;Materials;2023-12-18

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