Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures-Reference-Cited by-同舟云学术

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Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures

Published:2011-06-30 Issue:24 Volume:83 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Corfdir P.,Levrat J.,Dussaigne A.,Lefebvre P.,Teisseyre H.,Grzegory I.,Suski T.,Ganière J.-D.,Grandjean N.,Deveaud-Plédran B.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.83.245326/fulltext

Reference58 articles.

1. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

2. Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2

3. Improved quality (112¯0)a-plane GaN with sidewall lateral epitaxial overgrowth

4. Defect reduction in (112¯0) a-plane GaN by two-stage epitaxial lateral overgrowth

5. Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence

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1. AlGaN Microfins as Nonpolar UV Emitters Probed by Time-Resolved Cathodoluminescence;ACS Photonics;2022-04-13

2. Photoluminescence Study of Carrier Localization and Recombination in Nearly Strain‐Balanced Nonpolar InGaN/AlGaN Quantum Wells;physica status solidi (b);2022-03-06

3. Anomalous carrier dynamics and localization effects in nonpolar m-plane InGaN/GaN quantum wells at high temperatures;Nano Energy;2020-10

4. Time-resolved photoluminescence investigation of (Mg, Zn) O alloy growth on a non-polar plane;Superlattices and Microstructures;2018-04

5. Spatially dependent carrier dynamics in single InGaN/GaN core-shell microrod by time-resolved cathodoluminescence;Applied Physics Letters;2018-01-29

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