Time-resolved photoluminescence investigation of (Mg, Zn) O alloy growth on a non-polar plane
Author:
Funder
Ministry of Higher Education and Scientific Research of Iraq
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference31 articles.
1. MgxZn1−xO as a II–VI widegap semiconductor alloy
2. Band gap engineering based on MgxZn1−xO and CdyZn1−yO ternary alloy films
3. ZnO and ZnMgO growth on a-plane sapphire by molecular beam epitaxy
4. Dielectric functions (1 to 5 eV) of wurtzite MgxZn1−xO (x⩽0.29) thin films
5. Luminescence and surface properties of MgxZn1−xO thin films grown by pulsed laser deposition
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of Eu doping on the near band edge emission of Eu doped ZnO thin films after high temperature annealing;Journal of Luminescence;2019-06
2. Evidence of exciton complexes in non polar ZnO/(Zn,Mg)O A-plane quantum well;Superlattices and Microstructures;2018-08
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