Defect reduction in (112¯0) a-plane GaN by two-stage epitaxial lateral overgrowth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2423328
Reference24 articles.
1. Giant electric fields in unstrained GaN single quantum wells
2. Quantum-Confined Stark Effect in an AlGaN/GaN/AlGaN Single Quantum Well Structure
3. Molecular-beam epitaxy of GaN/AlxGa1−xN multiple quantum wells on R-plane (101̄2) sapphire substrates
4. Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire
5. Optimization of a-plane GaN growth by MOCVD on r-plane sapphire
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1. H+ ion implantation-induced effect investigations in a-plane GaN layer on r-plane sapphire;Applied Physics A;2023-09-07
2. Effect of substrate nitridation and a buffer layer on the growth of a non-polar a-plane GaN epitaxial layer on an r-plane sapphire substrate by laser molecular beam epitaxy;Materials Advances;2022
3. Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN;Scientific Reports;2021-05-06
4. Positioning of periodic AlN/GaN multilayers: Effect on crystalline quality of a-plane GaN;Materials Science in Semiconductor Processing;2020-01
5. Improved crystal quality of nonpolar a-plane GaN based on the nano pattern formed by the annealed thin Ni layer;Superlattices and Microstructures;2019-06
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