Chemistry of active oxygen in RuOx and its influence on the atomic layer deposition of TiO2 films-Reference-Cited by-同舟云学术

Chemistry of active oxygen in RuOx and its influence on the atomic layer deposition of TiO2 films

Published:2014 Issue:46 Volume:2 Page:9993-10001
ISSN:2050-7526
Container-title:J. Mater. Chem. C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Jeon Woojin¹²³,Lee Woongkyu¹²³,Yoo Yeon Woo¹²³,An Cheol Hyun¹²³,Han Jeong Hwan⁴⁵⁶,Kim Seong Keun⁷⁸⁹,Hwang Cheol Seong¹²³

Affiliation:

1. Department of Materials Science and Engineering and Inter-university Semiconductor Research Center

2. Seoul National University

3. Seoul 151-742, Republic of Korea

4. Advanced Materials Division

5. Korea Research Institute of Chemical Technology

6. Daejeon 305-600, Republic of Korea

7. Electronic Materials Research Center

8. Korea Institute of Science and Technology

9. Seoul 136-791, Republic of Korea

Abstract

The catalytic decomposition of RuO₂ with the help of Ru in the film played the crucial role for the increase in the active oxygen, which results that the growth per cycle of TiO₂ at the initial growth stage was drastically increased on RuOx (RuO₂/Ru mixture) compared to Ru and RuO₂.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/TC/C4TC01381F

Reference35 articles.

1. Atomic Layer Deposition: An Overview

2. Surface Chemistry for Atomic Layer Growth

3. Atomic layer deposition (ALD): from precursors to thin film structures

4. Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process

5. Atomic layer epitaxy

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