Enhancing the Crystallization and Properties of the SrRuO<sub>3</sub> Electrode Film Grown by Atomic-Layer-Deposited SrO and Pulsed-Chemical Vapor-Deposited RuO<sub>2</sub> through Al Substitution-Reference-Cited by-同舟云学术

Enhancing the Crystallization and Properties of the SrRuO₃ Electrode Film Grown by Atomic-Layer-Deposited SrO and Pulsed-Chemical Vapor-Deposited RuO₂ through Al Substitution

Published:2023-08-03 Issue:8 Volume:5 Page:4187-4197
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Lim Junil¹,Ye Kun Hee¹²,Kwon Dae Seon¹,Seo Haengha¹,Kim Tae Kyun¹,Paik Heewon¹,Shin Jong Hoon¹,Song Haewon¹,Jang Yoon Ho¹,Kang Sukin¹,Choi Jung-Hae²^ORCID,Hwang Cheol Seong¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea

2. Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea

Funder

Ministry of Science and ICT, South Korea

Korea Institute of Science and Technology

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c00448

Reference24 articles.

1. Capacitors with an Equivalent Oxide Thickness of <0.5 nm for Nanoscale Electronic Semiconductor Memory

2. SrTiO3: An intrinsic quantum paraelectric below 4 K

3. Growth of SrTiO[sub 3] and BaTiO[sub 3] Thin Films by Atomic Layer Deposition

4. Composition influence on the physical and electrical properties of SrxTi1−xOy-based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom electrodes

5. Atomic Layer Deposition of SrTiO3 Thin Films with Highly Enhanced Growth Rate for Ultrahigh Density Capacitors

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