Atomic Layer Deposition of SrTiO3 Thin Films with Highly Enhanced Growth Rate for Ultrahigh Density Capacitors-Reference-Cited by-同舟云学术

Atomic Layer Deposition of SrTiO3 Thin Films with Highly Enhanced Growth Rate for Ultrahigh Density Capacitors

Published:2011-03-30 Issue:8 Volume:23 Page:2227-2236
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Lee Sang Woon¹,Han Jeong Hwan¹,Han Sora¹,Lee Woongkyu¹,Jang Jae Hyuck¹,Seo Minha¹,Kim Seong Keun¹,Dussarrat C.²,Gatineau J.²,Min Yo-Sep³,Hwang Cheol Seong¹

Affiliation:

1. WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 151-744, Korea

2. Air Liquide, 28, Wadai, Tsukuba-Shi, Ibaraki Pref., 300-4247, Japan

3. Department of Chemical Engineering, Konkuk University, Seoul, 143-701, Korea

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm2002572

Reference38 articles.

1. Capacitors with an Equivalent Oxide Thickness of <0.5 nm for Nanoscale Electronic Semiconductor Memory

2. New TIT capacitor with ZrO2/Al2O3/ZrO2 dielectrics for 60nm and below DRAMs

3. Al-Doped TiO2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors