Al-Doped TiO2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors-Reference-Cited by-同舟云学术

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Al-Doped TiO2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors

Published:2008-04-21 Issue:8 Volume:20 Page:1429-1435
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Kim Seong Keun,Choi Gyu-Jin,Lee Sang Young,Seo Minha,Lee Sang Woon,Han Jeong Hwan,Ahn Hyo-Shin,Han Seungwu,Hwang Cheol Seong

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference30 articles.

1. Alternative dielectrics to silicon dioxide for memory and logic devices

2. , in Nanoelectronics and Information Technology, (Ed: ), WILEY-VCH, Weinheim, Germany 2003, Chap. IV.

3. Quantitative measurement of space‐charge effects in lead zirconate‐titanate memories

4. Dielectrics for Field Effect Technology

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