In-situ crystallization of rutile-phased TiO2 via the template effect using MoO2 electrode for the metal-insulator-metal capacitor applications

Author:

Hwang Chaeyeong,Kim Ye Won,Park Jongwook,Kim Myeong Ho,Kim Jin-Sik,Jeon Woojin

Publisher

Elsevier BV

Reference51 articles.

1. Recent advances in the understanding of high-k dielectric materials deposited by atomic layer deposition for dynamic random-access memory capacitor applications;Jeon;J. Mater. Res.,2020

2. Toward advanced high-k and electrode thin films for DRAM capacitors via atomic layer deposition;Kim;Adv. Mater. Technol.,2023

3. 1T–1C dynamic random access memory status, challenges, and prospects;Spessot;IEEE Trans. Electron Devices,2020

4. DRAM Circuit and Process Technology;Kim,2022

5. Semiconductor memory scaling and beyond;Hong;Proc. - 2012 IEEE Asian Solid-State Circuits Conf., A-SSCC,2012

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