Recent advances in the understanding of high-k dielectric materials deposited by atomic layer deposition for dynamic random-access memory capacitor applications-Reference-Cited by-同舟云学术

Recent advances in the understanding of high-k dielectric materials deposited by atomic layer deposition for dynamic random-access memory capacitor applications

Published:2019-11-08 Issue:7 Volume:35 Page:775-794
ISSN:0884-2914
Container-title:Journal of Materials Research
language:en
Short-container-title:J. Mater. Res.

Author:

Jeon Woojin^ORCID

Abstract

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference96 articles.

1. Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition;Zhu;Nat. Commun.,2014

2. Growth of rutile-TiO2 thin films via Sn doping and insertion of ultra-thin SnO2 interlayer by atomic layer deposition

3. High-κ gate dielectrics: Current status and materials properties considerations

4. Controlling Work Function and Damaging Effects of Sputtered RuO2 Gate Electrodes by Changing Oxygen Gas Ratio during Sputtering

5. Conduction Mechanism and Reliability Characteristics of a Metal–Insulator–Metal Capacitor with Single ZrO2Layer

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