Achieving High Dielectric Constants in Tetragonal Single‐Phase ZrHfO <sub>2</sub> Thin Films through the Atomic Layer Deposition Process Using a Mixed Precursor-Reference-Cited by-同舟云学术

Achieving High Dielectric Constants in Tetragonal Single‐Phase ZrHfO ₂ Thin Films through the Atomic Layer Deposition Process Using a Mixed Precursor

Published:2022-04-12 Issue:11 Volume:219 Page:2100652
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Physica Status Solidi (a)

Author:

Kim Jenam¹,Ryu Young Uk¹,Lee Ae Jin¹,Kim Ye Won¹,Hwang Ji Hyeon¹,Kim Youngjin¹,Oh Hansol²,Park YongJoo²,Jeon Woojin¹^ORCID

Affiliation:

1. Department of Advanced Materials Engineering for Information and Electronics, and Integrated Education Program for Frontier Science & Technology (BK21 Four) Kyung Hee University Yongin Gyeonggi 17104 Korea

2. Advanced Research Development Team SK Trichem Co. Ltd. Sejong 30068 Korea

Funder

Korea Evaluation Institute of Industrial Technology

Korea Institute of Energy Technology Evaluation and Planning

Kyung Hee University

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202100652

Reference46 articles.

1. Emerging Applications for High K Materials in VLSI Technology

2. Prospective of Semiconductor Memory Devices: from Memory System to Materials

3. Recent advances in the understanding of high-k dielectric materials deposited by atomic layer deposition for dynamic random-access memory capacitor applications

4. Future of dynamic random-access memory as main memory

5. Detailed leakage current analysis of metal–insulator–metal capacitors with ZrO2, ZrO2/SiO2/ZrO2, and ZrO2/Al2O3/ZrO2 as dielectric and TiN electrodes

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