Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays-Reference-Cited by-同舟云学术

Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays

Published:2016 Issue:34 Volume:8 Page:15629-15636
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Luo Qing¹²³⁴⁵,Xu Xiaoxin¹²³⁴⁵,Liu Hongtao¹²³⁴⁵,Lv Hangbing¹²³⁴⁵,Gong Tiancheng¹²³⁴⁵,Long Shibing¹²³⁴⁵,Liu Qi¹²³⁴⁵,Sun Haitao¹²³⁴⁵,Banerjee Writam¹²³⁴⁵,Li Ling¹²³⁴⁵,Gao Jianfeng¹²³⁴⁵,Lu Nianduan¹²³⁴⁵,Liu Ming¹²³⁴⁵

Affiliation:

1. Key Laboratory of Microelectronics Devices and Integrated Technology

2. Institute of Microelectronics

3. Chinese Academy of Sciences

4. Beijing 100029, China

5. Jiangsu National Synergetic Innovation Center for Advances Materials (SICAM)

Abstract

A four layer vertical crossbar array was successfully demonstrated based on the developed self-selective device. High uniformity, ultra-low leakage, sub-nA operation, self-compliance, and excellent read/write disturbance immunity were achieved.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2016/NR/C6NR02029A

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