Crystallographic orientation and strain distribution in AlN seeds grown on 6H–SiC substrates by the PVT method-Reference-Cited by-同舟云学术

Crystallographic orientation and strain distribution in AlN seeds grown on 6H–SiC substrates by the PVT method

Published:2021 Issue:28 Volume:23 Page:4946-4953
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Yao Xiaogang¹²³⁴,Wang Guodong¹²³⁴,Tu Huayao¹²³⁴,Liu Shengfu¹²³⁴,Yang Mingzhi⁵⁶⁷⁴,Kong Zhen¹²³⁴,Shao Yongliang¹²³⁴⁵,Wu Yongzhong¹²³⁴⁵^ORCID,Hao Xiaopeng¹²³⁴⁵^ORCID

Affiliation:

1. State Key Lab of Crystal Materials

2. Shandong University

3. Jinan 250100

4. P. R. of China

5. Department of Materials Science and Engineering

6. Qilu University of Technology

7. Jinan

Abstract

AlN crystal is prepared on 6H–SiC substrate by PVT method, the growth pattern is [0001]_AlN‖[0001]_6H–SiC and [101̄0]_AlN‖[101̄0]_6H–SiC and the stress in AlN layer decreases with the increase of thickness.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Shandong Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/CE/D1CE00366F

Reference35 articles.

1. Favourable growth conditions for the preparation of bulk AlN single crystals by PVT

2. High‐Quality GaN Crystal Grown on Laser Decomposed GaN–Sapphire Substrate and Its Application in Photodetector