State-of-the-art and prospective progress of growing AlN substrates by physical vapor transport-Reference-Cited by-同舟云学术

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State-of-the-art and prospective progress of growing AlN substrates by physical vapor transport

Published:2023-09 Issue: Volume:617 Page:127276
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Yao Xiaogang,Zhang Baoguo,Hu Haixiao,Wang Yong,Kong Zhen,Wu Yongzhong,Shao Yongliang,Hao Xiaopeng

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference121 articles.

1. Extending the spectrum of fully integrated photonics to submicrometre wavelengths;Tran;Nature,2022

2. GaN/NbN epitaxial semiconductor/superconductor heterostructures;Yan;Nature,2018

3. GaN photonic-crystal surface-emitting laser at blue-violet wavelengths;Matsubara;Science,2008

4. Plasmonic Nanolaser Using Epitaxially Grown Silver Film;Lu;Science,2012

5. In Potential of Si Tandem Solar Cell Modules for PV-Powered Vehicles;Yamaguchi,2021

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Cl2 corrosion resistance of SiC coatings with different morphologies;Materials Today Communications;2024-06

2. Effect of Air Layer Thickness on AlN Crystal Growth by the PVT Method;Crystal Growth & Design;2024-05-15

3. Growth and properties of tantalum carbide coatings on graphite by TRD technique;Surface and Coatings Technology;2024-05

4. Growth of Spontaneous Nucleation AlN Crystals by Al-Base Alloy Evaporation in Nitrogen Atmosphere;Crystals;2024-03-30

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