High‐Quality GaN Crystal Grown on Laser Decomposed GaN–Sapphire Substrate and Its Application in Photodetector-Reference-Cited by-同舟云学术

High‐Quality GaN Crystal Grown on Laser Decomposed GaN–Sapphire Substrate and Its Application in Photodetector

Published:2020-09-03 Issue:20 Volume:217 Page:2000380
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Hu Haixiao¹,Zhang Baoguo¹,Wu Yongzhong¹²,Shao Yongliang¹²,Liu Lei¹,Hao Xiaopeng¹²^ORCID

Affiliation:

1. State Key Laboratory of Crystal Materials Shandong University Jinan 250100 P. R. China

2. Department of Materials Science and Engineering Qilu University of Technology, (Shandong Academy of Science) Jinan 250353 P. R. China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202000380

Reference40 articles.

1. Recent Progress in GaN-Based Light-Emitting Diodes

2. Advances in Bulk Crystal Growth of AlN and GaN

3. Characterization of free-standing hydride vapor phase epitaxy GaN

4. Recent achievements in AMMONO-bulk method

5. GaN crystallization by the high-pressure solution growth method on HVPE bulk seed

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