Recent achievements in AMMONO-bulk method-Reference-Cited by-同舟云学术

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Recent achievements in AMMONO-bulk method

Published:2010-09 Issue:18 Volume:312 Page:2499-2502
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Dwiliński R.,Doradziński R.,Garczyński J.,Sierzputowski L.,Kucharski R.,Zając M.,Rudziński M.,Kudrawiec R.,Serafińczuk J.,Strupiński W.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference20 articles.

1. Nitride Semiconductors and Devices;Morkoc,1999

2. Deposition of thick GaN layers by HVPE on the pressure grown GaN substrates

3. Preparation of GaN Single Crystals Using a Na Flux

4. Mechanisms of crystallization of bulk GaN from the solution under high N2 pressure

5. Bulk ammonothermal GaN

Cited by 85 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Research Progress in Liquid Phase Growth of GaN Crystals;Chemistry – A European Journal;2024-01-12

2. Growth of bulk GaN crystals for the production of substrates;Reference Module in Materials Science and Materials Engineering;2024

3. Impact of interfacial compositional diffusion on interfacial phonon scattering and transmission in GaN/AlN heterostructure;Journal of Applied Physics;2023-03-01

4. The importance of lone pairs to structure and bonding of the novel germanium nitridophosphate GeP₂N₄;Journal of Materials Chemistry A;2023

5. Low-pressure acidic ammonothermal growth of 2-inch-diameter nearly bowing-free bulk GaN crystals;Applied Physics Express;2022-05-01

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