Mechanisms of crystallization of bulk GaN from the solution under high N2 pressure
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. K. Hiramatsu, A. Usui, EMIS Datareview Series No. 23, Published by INSPEC, The Institution of Electrical Engineers, London, 1999, pp. 440–444.
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3. Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
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