Deposition of thick GaN layers by HVPE on the pressure grown GaN substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. Thick and high-quality GaN growth on GaAs (111) substrates for preparation of freestanding GaN
2. Hydride vapor-phase epitaxy growth of high-quality GaN bulk single crystal by epitaxial lateral overgrowth
3. Thick GaN layers grown by hydride vapor-phase epitaxy: hetero- versus homo-epitaxy
4. Recent advances in defect-selective etching of GaN
5. F. Tuomisto, unpublished.
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