Thick GaN layers grown by hydride vapor-phase epitaxy: hetero- versus homo-epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference23 articles.
1. Growth of gallium nitride by hydride vapor-phase epitaxy
2. Low-temperature luminescence of exciton and defect states in heteroepitaxial GaN grown by hydride vapor phase epitaxy
3. Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff
4. Structural and chemical characterization of free-standing GaN films separated from sapphire substrates by laser lift-off
5. GaN homoepitaxy by metalorganic chemical-vapor deposition on free-standing GaN substrates
Cited by 26 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Simulation study of the tunnel junction position effect on the parameters of the InxGa1-xN dual junction solar cell;Engineering Research Express;2023-08-29
2. Deep-level transient spectroscopy of GaN grown by electrochemical deposition and irradiated with alpha particles;Materials Science in Semiconductor Processing;2021-06
3. Growth temperatures and the excess chlorine effect of N-Polar GaN growth via tri-halide vapor phase epitaxy;Journal of Crystal Growth;2018-11
4. Atomic force microscopy studies of homoepitaxial GaN layers grown on GaN template by laser MBE;AIP Conference Proceedings;2016
5. Oxygen and hydrogen profiles and electrical properties of unintentionally doped gallium nitride grown by hydride vapor phase epitaxy;Crystal Research and Technology;2015-05-07
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3