Thick and high-quality GaN growth on GaAs (111) substrates for preparation of freestanding GaN
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
2. GaN Growth Using GaN Buffer Layer
3. Thermodynamical properties of III–V nitrides and crystal growth of GaN at high N2 pressure
4. Photopumped Stimulated Emission from Homoepitaxial GaN Grown on Bulk GaN Prepared by Sublimation Method
5. Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
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