Evolution of 2-inch AlN single crystal grown on SiC seed via PVT method

Author:

Zhang Li,Wang ZenghuaORCID,Cheng Hongjuan,Fan Chenchen,Wang Yingmin,Zhang Ying,Jin Lei,Lai Zhanpin

Publisher

Elsevier BV

Reference39 articles.

1. Ni/Au Schottky diodes on AlxGa1-xN (0.7 < x < 1) grown on AlN single crystal substrates;Xie;Phys. Status Solidi C,2011

2. Epitaxial layers of AlGaN channel HEMTs on AlN substrates;Hashimoto;SEI Tech. Rev.,2010

3. The preparation and properties of aluminum nitride films;Chu;J. Electrochem. Soc.,1975

4. First demonstration of X-band AlGaN/GaN high electron mobility transistors using free-standing AlN substrate over 15 W mm(-1) output power density;Ozaki;APEX,2021

5. High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates;Reddy;Appl. Phys. Lett.,2020

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