Behavior of phosphorous and contaminants from molecular doping combined with a conventional spike annealing method-Reference-Cited by-同舟云学术

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Behavior of phosphorous and contaminants from molecular doping combined with a conventional spike annealing method

Published:2014 Issue:2 Volume:6 Page:706-710
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Shimizu Yasuo,Takamizawa Hisashi,Inoue Koji,Yano Fumiko,Nagai Yasuyoshi,Lamagna Luca,Mazzeo Giovanni,Perego Michele,Prati Enrico

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2014/NR/C3NR03605G

Reference27 articles.

1. Enhancing semiconductor device performance using ordered dopant arrays

2. Controlled shallow single-ion implantation in silicon using an active substrate for sub-20‐keV ions

3. Solid state quantum computer development in silicon with single ion implantation

4. Anderson–Mott transition in arrays of a few dopant atoms in a silicon transistor

5. Charge Sensing of Precisely Positioned P Donors in Si

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1. Polymeric precision doping as an emerging technology for the downscaling of microelectronic devices: State of the art;European Polymer Journal;2024-03

2. Phosphorus activation in silicon: To deglaze or not to deglaze, that is the question;Materials Science in Semiconductor Processing;2023-10

3. Electrical characterization of thin silicon-on-insulator films doped by means of phosphorus end-terminated polymers;Materials Science in Semiconductor Processing;2023-08

4. Recent advances and emerging opportunities in rapid thermal annealing (RTA) of polymers;Molecular Systems Design & Engineering;2023

5. Boron Doping in Next-Generation Materials for Semiconductor Device;Characteristics and Applications of Boron;2022-10-26

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