Comparative study on in situ surface cleaning effect of intrinsic oxide-covering GaAs surface using TMA precursor and Al2O3 buffer layer for HfGdO gate dielectrics-Reference-Cited by-同舟云学术

Comparative study on in situ surface cleaning effect of intrinsic oxide-covering GaAs surface using TMA precursor and Al2O3 buffer layer for HfGdO gate dielectrics

Published:2018 Issue:10 Volume:6 Page:2546-2555
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Gao Juan¹²³⁴⁵,He Gang¹²³⁴⁵^ORCID,Liang Shuang¹²³⁴⁵,Wang Die¹²³⁴⁵,Yang Bing¹²³⁴⁵

Affiliation:

1. School of Physics and Materials Science

2. Radiation Detection Materials & Devices Lab

3. Anhui University

4. Hefei 230601

5. China

Abstract

In this work, comparative study on the cleaning effect of the intrinsic oxide covering GaAs surface using TMA precursor and Al₂O₃ buffer layer were performed.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Anhui Province

Anhui University

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TC/C8TC00070K

Reference39 articles.

1. Advanced Gate Stacks for High-Mobility Semiconductors , ed. A. Dimoulas , E. Gusev , P. McIntyre and M. Heyns , Springer , Berlin Heidelberg , 2007 , pp. 293–310

2. Thermal Stability Concern of Metal-Insulator-Semiconductor Contact: A Case Study of Ti/TiO2/n-Si Contact

3. Flexible inkjet printed high-k HfO2-based MIM capacitors

4. Effects of Titanium Layer Oxygen Scavenging on the High-k/InGaAs Interface

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interface Optimization and Performance Enhancement of Er2O3-Based MOS Devices by ALD-Derived Al2O3 Passivation Layers and Annealing Treatment;Nanomaterials;2023-05-26

2. Interface Chemistry and Defect State Optimization of the ErSmO/InP Heterojunction Modified by ALD-Driven Al₂O₃ Interlayers;ACS Applied Electronic Materials;2023-02-09

3. Near-Ideal Top-Gate Controllability of InGaZnO Thin-Film Transistors by Suppressing Interface Defects with an Ultrathin Atomic Layer Deposited Gate Insulator;ACS Applied Materials & Interfaces;2023-01-29

4. Electronic structure and origin of intrinsic defects in sputtered HfTiO2 alloy dielectric on GaAs surface;Journal of Alloys and Compounds;2022-07

5. Significantly improved high k dielectric performance: Rare earth oxide as a passivation layer laminated with TiO2 film;Journal of Rare Earths;2022-05