Comparative study on in situ surface cleaning effect of intrinsic oxide-covering GaAs surface using TMA precursor and Al2O3 buffer layer for HfGdO gate dielectrics-Reference-Cited by-同舟云学术

Comparative study on in situ surface cleaning effect of intrinsic oxide-covering GaAs surface using TMA precursor and Al2O3 buffer layer for HfGdO gate dielectrics

Published:2018 Issue:10 Volume:6 Page:2546-2555
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Gao Juan¹²³⁴⁵,He Gang¹²³⁴⁵^ORCID,Liang Shuang¹²³⁴⁵,Wang Die¹²³⁴⁵,Yang Bing¹²³⁴⁵

Affiliation:

1. School of Physics and Materials Science

2. Radiation Detection Materials & Devices Lab

3. Anhui University

4. Hefei 230601

5. China

Abstract

In this work, comparative study on the cleaning effect of the intrinsic oxide covering GaAs surface using TMA precursor and Al₂O₃ buffer layer were performed.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Anhui Province

Anhui University

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TC/C8TC00070K

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