Effects of Titanium Layer Oxygen Scavenging on the High-k/InGaAs Interface-Reference-Cited by-同舟云学术

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Effects of Titanium Layer Oxygen Scavenging on the High-k/InGaAs Interface

Published:2016-06-23 Issue:26 Volume:8 Page:16979-16984
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Winter Roy¹,Shekhter Pini¹,Tang Kechao²,Floreano Luca³,Verdini Alberto³,McIntyre Paul C.²,Eizenberg Moshe¹

Affiliation:

1. Department of Materials Science and Engineering, Technion-Israel Institute of Technology, Haifa 3200003, Israel

2. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States

3. Laboratorio TASC, IOM-CNR, Area di Ricerca, Trieste 34149, Italy

Funder

United States - Israel Binational Science Foundation

Russell Berrie Nanotechnology Institute, Technion-Israel Institute of Technology

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.6b02957

Reference30 articles.

1. Ultimate Scaling of CMOS Logic Devices with Ge and III–V Materials

2. Nanometre-scale electronics with III–V compound semiconductors

3. Interface engineering and chemistry of Hf-based high-k dielectrics on III–V substrates

4. Simplified Surface Preparation for GaAs Passivation Using Atomic Layer-Deposited High- $\kappa$ Dielectrics

5. Surface passivation and implications on high mobility channel performance (Invited Paper)

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2. On the Structure of Oxygen Deficient Amorphous Oxide Films;Advanced Science;2023-12-26

3. Monolithically Integrated Polysilicon/Oxide-Semiconductor Hybrid Thin-Film Transistors for Advanced Sensing;IEEE Journal of the Electron Devices Society;2023

4. Schottky barrier contact on In_0.53Ga_0.47As with short-wave infrared transparent conductive oxide;Applied Physics Letters;2022-12-05

5. Oxygen vacancy concentration as a function of cycling and polarization state in TiN/Hf_0.5Zr_0.5O₂/TiN ferroelectric capacitors studied by x-ray photoemission electron microscopy;Applied Physics Letters;2022-05-16

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