Flexible inkjet printed high-k HfO2-based MIM capacitors-Reference-Cited by-同舟云学术

Flexible inkjet printed high-k HfO2-based MIM capacitors

Published:2016 Issue:9 Volume:4 Page:1804-1812
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Vescio G.¹²³⁴,López-Vidrier J.¹²³⁴,Leghrib R.⁵⁶⁷⁸,Cornet A.¹²³⁴,Cirera A.¹²³⁴

Affiliation:

1. MIND-IN2UB, Electronics Departament

2. Universitat de Barcelona

3. Barcelona

4. Spain

5. Laboratoire d'Electronique, de Traitement du signal et de Modélisation Physique (LETSMP) Faculté des Sciences

6. Université Ibn Zohr

7. Agadir

8. Morocco

Abstract

The soaring global demand for flexible, wearable and transparent devices has created an urgent need for new fabrication technologies that are both cost-competitive and eco-friendly.

Funder

Ministerio de Educación, Cultura y Deporte

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/TC/C5TC03307A

Reference77 articles.

1. All inkjet-printed, fully self-aligned transistors for low-cost circuit applications

2. High Yield, Single Droplet Electrode Arrays for Nanoscale Printed Electronics

3. Inkjet Metrology II: Resolved Effects of Ejection Frequency, Fluidic Pressure, and Droplet Number on Reproducible Drop-on-Demand Dispensing

4. High-Resolution Inkjet Printing of All-Polymer Transistor Circuits

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