Crystallization of Ge in ion-irradiated amorphous-Ge/Au thin films-Reference-Cited by-同舟云学术

Crystallization of Ge in ion-irradiated amorphous-Ge/Au thin films

Published:2020 Issue:4 Volume:22 Page:666-677
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Maity G.¹²³⁴,Ojha S.⁵⁶⁴,Dubey S.⁷⁸⁹¹⁰⁴,Kulriya P. K.⁵⁶⁴^ORCID,Sulania I.⁵⁶⁴,Dhar S.⁷¹¹¹²⁴,Som T.¹³¹⁴⁴,Kanjilal D.⁵⁶⁴,Patel Shiv P.¹²³⁴^ORCID

Affiliation:

1. Department of Pure and Applied Physics

2. Guru Ghasidas Vishwavidyalaya (A Central University)

3. Bilaspur 495009

4. India

5. Inter University Accelerator Centre

6. New Delhi 110067

7. Department of Physics

8. School of Engineering

9. University of Petroleum and Energy Studies

10. Dehradun-248007

11. Shiv Nadar University

12. Nagar-201314

13. Institute of Physics

14. Bhubaneswar-751005

Abstract

Herein, the structural, optical, and electrical properties of Au-induced crystallization in amorphous germanium (a-Ge) thin films are presented for future solar energy material applications.

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/CE/C9CE01584A

Reference44 articles.

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