Fractal formalism in crystallized-Ge via Al induced crystallization under ion irradiation

Author:

Meher Topeswar,Maity G.,Yadav R.P.,Bharti ,Chaudhary Dhirendra K.ORCID,Singhal R.,Singh Vineet K.ORCID,Ojha S.,Kanjilal D.,Patel Shiv P.ORCID

Publisher

Elsevier BV

Reference51 articles.

1. Low-temperature (180 °C) formation of large-grained Ge (111) thin film on insulator using accelerated metal-induced crystallization;Toko;Appl Phys Lett,2014

2. Effects of gold-induced crystallization process on the structural and electrical properties of germanium thin films;Kabacelik;Surface and Interface Analysis,2018

3. Aluminum-induced crystallization of amorphous silicon on glass substrates above and below the eutectic temperature;Nast;Appl Phys Lett,1998

4. Thermodynamics and mechanism of metal-induced crystallization in immiscible alloy systems: Experiments and calculations on Al/a-Ge and Al/a-Si bilayers;Wang;Phys Rev B Condens Matter Mater Phys,2008

5. Stress and microstructure evolution in Al-induced crystallization of amorphous Ge thin films;Zhang;Thin Solid Films,2011

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