Low Energy Ion-Induced Crystallization of Ge in <i>c</i>-Al/<i>a</i>-Ge Bilayer Thin Films at Low Temperatures of ∼125 °C-Reference-Cited by-同舟云学术

Low Energy Ion-Induced Crystallization of Ge in c-Al/a-Ge Bilayer Thin Films at Low Temperatures of ∼125 °C

Published:2023-12-04 Issue:1 Volume:24 Page:122-131
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Maity Gurupada¹²^ORCID,Ojha Sunil³,Dubey Santosh⁴,Kanjilal Dinakar³,Patel Shiv P.¹

Affiliation:

1. Department of Pure and Applied Physics, Guru Ghasidas Vishwavidyalaya (A Central University), Bilaspur 495009, India

2. Department of Physics, Galgotias University, Gautam Buddh Nagar 203201, India

3. Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067, India

4. Department of Physics, School of Engineering, University of Petroleum and Energy Studies, Dehradun 248007, India

Funder

University Grants Commission

Department of Atomic Energy, Government of India

Department of Science and Technology, Ministry of Science and Technology, India

Inter-University Accelerator Centre

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.3c00581

Reference60 articles.

1. 40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells

2. Explosive Crystallization Characteristic of Ge–Cu–Te Thin Films for Phase-Change Memory

3. Polycrystalline silicon thin-film solar cells: Status and perspectives

4. High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization

5. Nagashima, T.; Okumura, K.; Muratal, K.; Yamaguchi, M. Proceedings of the Third World Conference on Photovoltaic Energy Conversion, Osaka, Japan, May 11–18, 2003; pp 200–203.

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