High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-017-17273-6.pdf
Reference41 articles.
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3. Brunco, D. P. et al. Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance. J. Electrochem. Soc. 155, H552 (2008).
4. Pillarisetty, R. Academic and industry research progress in germanium nanodevices. Nature 479, 324–328 (2011).
5. Zhang, R., Iwasaki, T., Taoka, N., Takenaka, M. & Takagi, S. High-Mobility Ge pMOSFET With 1-nm EOT Al2O3/GeO x /Ge Gate Stack Fabricated by Plasma Post Oxidation. IEEE Trans. Electron Devices 59, 335–341 (2012).
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